THE REACTION-KINETICS OF THE H2 REDUCTION OF WF6 IN THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS

被引：0
|
作者：
VANDERPUTTE, P
机构：
来源：
PHILIPS JOURNAL OF RESEARCH | 1987年 / 42卷 / 5-6期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：608 / 626
页数：19
相关论文
共 50 条
  • [21] THE DEPOSITION MECHANISMS AND MICROSTRUCTURES OF TUNGSTEN FILMS PRODUCED BY SILICON REDUCTION OF WF6
    PARK, HL
    PARK, CD
    CHUN, JS
    THIN SOLID FILMS, 1988, 166 (1-2) : 37 - 43
  • [22] GAS SURFACE-REACTIONS IN THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN USING WF6/SIH4 MIXTURES
    YU, ML
    ELDRIDGE, BN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 625 - 629
  • [23] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
    BRYANT, WA
    MEIER, GH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 559 - 565
  • [24] Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4
    Kajikawa, Y.
    Tsumura, T.
    Noda, S.
    Komiyama, H.
    Shimogaki, Y.
    Dig. Pap. - Int. Microprocess. Nanotechnol. Conf., MNC, 1600, (256-257):
  • [25] Si consumption in selective chemical vapor deposition of tungsten using SiH4 reduction of WF6
    Takahashi, M
    Takayama, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (04) : G229 - G231
  • [26] Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2:: Effect of added H2, SiH4, and Si2H6
    Saito, Takeyasu
    Shimogaki, Yukihiro
    Egashira, Yasuyuki
    Sugawara, Katsuro
    Takahiro, Katsumi
    Nagata, Shinji
    Yamaguchi, Sadae
    Komiyama, Hiroshi
    MICROELECTRONIC ENGINEERING, 2006, 83 (10) : 1994 - 2000
  • [27] SURFACE-REACTIONS IN THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN USING WF6 AND SIH4 ON AL, PTSI, AND TIN
    YU, ML
    AHN, KY
    JOSHI, RV
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 1055 - 1061
  • [28] ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF PLATINUM - REACTION-KINETICS AND VAPOR-PRESSURES OF PRECURSORS
    XUE, ZL
    THRIDANDAM, H
    KAESZ, HD
    HICKS, RF
    CHEMISTRY OF MATERIALS, 1992, 4 (01) : 162 - 166
  • [29] ELECTRICAL RESISTIVITY OF TUNGSTEN FILMS PREPARED BY WF6 REDUCTION
    MAYADAS, AF
    CUOMO, JJ
    ROSENBERG, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1742 - +
  • [30] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN CARBIDE
    KELLY, CM
    GARG, D
    DYER, PN
    THIN SOLID FILMS, 1992, 219 (1-2) : 103 - 108
12345