THE REACTION-KINETICS OF THE H2 REDUCTION OF WF6 IN THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS

被引：0
|
作者：
VANDERPUTTE, P
机构：
来源：
PHILIPS JOURNAL OF RESEARCH | 1987年 / 42卷 / 5-6期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：608 / 626
页数：19
相关论文
共 50 条
  • [1] CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN BY H2 REDUCTION OF WCL6
    AMMERLAAN, JAM
    BOOGAARD, DRM
    VANDERPUT, PJ
    SCHOONMAN, J
    APPLIED SURFACE SCIENCE, 1991, 53 : 24 - 29
  • [2] Influence of deposition parameters on the texture of chemical vapor deposited tungsten films by a WF6/H2/Ar gas source
    Chang, IS
    Hon, MH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (09) : 3235 - 3240
  • [3] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN
    BRYANT, WA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543
  • [4] PLASMA-SURFACE AND GAS-SURFACE INTERACTIONS DURING THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FROM H2/WF6
    GREEN, WM
    HESS, DW
    OLDHAM, WG
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4696 - 4703
  • [5] SELECTIVE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN USING WF6 AND GEH4
    VANDERJEUGD, CA
    LEUSINK, GJ
    JANSSEN, GCAM
    RADELAAR, S
    APPLIED PHYSICS LETTERS, 1990, 57 (04) : 354 - 356
  • [6] Run to run control in tungsten chemical vapor deposition using H2/WF6 at low pressures
    Sreenivasan, R
    Gougousi, T
    Xu, YH
    Kidder, J
    Zafiriou, E
    Rubloff, GW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05): : 1931 - 1941
  • [7] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF BLANKET TUNGSTEN USING A GASEOUS MIXTURE OF WF6, SIH4, AND H2
    PARK, HL
    YOON, SS
    PARK, CO
    CHUN, JS
    THIN SOLID FILMS, 1989, 181 : 85 - 93
  • [8] RAPID THERMAL LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS ONTO INP USING WF6 AND H-2
    KATZ, A
    FEINGOLD, A
    ELROY, A
    PEARTON, SJ
    LANE, E
    NAKAHARA, S
    GEVA, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (11) : 1325 - 1331
  • [9] SELECTIVE DEPOSITION OF TUNGSTEN FILMS VIA SI AND H-2 REDUCTION OF WF6
    PAULEAU, Y
    LAMI, P
    MINGHETTI, B
    TISSIER, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C359 - C359
  • [10] Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6
    Jongste, JF
    Oosterlaken, TGM
    Janssen, GCAM
    Radelaar, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) : 167 - 169
12345