INTERFACE STABILITY AND THE GROWTH OF OPTICAL-QUALITY PEROVSKITES ON MGO

被引：121
作者：
MCKEE, RA
WALKER, FJ
SPECHT, ED
JELLISON, GE
BOATNER, LA
HARDING, JH
机构：
[1] UNIV TENNESSEE,KNOXVILLE,TN 37996
[2] HARWELL LAB,AEA IND TECHNOL,DEPT THEORET STUDIES,DIDCOT OX11 0RA,OXON,ENGLAND
来源：
PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.72.2741
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An understanding of heteroepitaxy between perovskite and alkaline earth oxides is developed in terms of ion size and interfacial electrostatics. Interfacial energy minimization at the first atomic layers is the basis for a commensurate, unit-cell stability. This unit-cell stability presents the opportunity to study reduced dimensional or two-dimensional phenomena in thin-film ferroelectrics and is the basis for growth of high crystal quality, mum-thick films for optical device applications.
引用
收藏
页码：2741 / 2744
页数：4
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