POLYACRYLIC ACID-DOPED POLYANILINE AS P-TYPE SEMICONDUCTOR IN SCHOTTKY-BARRIER ELECTRONIC DEVICE

被引：26
作者：
CHEN, SA
YIH, F
LEE, HT
机构：
[1] Department of Chemical Engineering, National Tsing-Hua University, Hsinchu
来源：
SYNTHETIC METALS | 1993年 / 57卷 / 01期
关键词：
D O I：
10.1016/0379-6779(93)90561-A
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large area (about 0.3-1 cm2) Schottky diodes with polyacrylic acid (PAA)-doped polyaniline (PAn) and undoped PAn as p-type semiconductors sandwiched in between aluminum (Al) and indium-tin oxide (ITO) prepared by casting technique exhibit a moderate rectifying behavior and low leakage current. The current rectification ratio of the diode after doping increases by 1-order raising from 30 at +/-1.3 V to 433 at +/-0.8 V; and the passing current density raises from 10(-5) A/cm2 to 10(-2) A/cm2.
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收藏
页码：4082 / 4086
页数：5
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