SHORT-CHANNEL EFFECTS ON MOSFET SUBTHRESHOLD SWING

被引：13

作者：

TARR, NG ^{[1
]}

WALKEY, DJ ^{[1
]}

ROWLANDSON, MB ^{[1
]}

HEWITT, SB ^{[1
]}

MACELWEE, TW ^{[1
]}

机构：

[1] NO TELECOM ELECT LTD,OTTAWA,ON K1Y 4H7,CANADA

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)00147-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = partial derivative V-G/partial derivative log(10) I-D in a MOSFET may decrease significantly as gate length L(G) is reduced before finally increasing catastrophically when L(G) becomes so short that punchthrough current flows. The effect is largest in devices with lightly doped substrates, deep source/drain junctions, and heavy threshold adjust implants operated at high drain bias. An explanation for the effect is provided in terms of sharing of the depletion region charge between gate and drain.

引用

页码：697 / 701

页数：5

共 7 条

[1] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J].