ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS

被引：139

作者：

OKUSHI, H

TOKUMARU, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 06期

关键词：

D O I：

10.1143/JJAP.19.L335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L335 / L338

页数：4

共 9 条

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[3]

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[8] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J].

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[9] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J].

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