TRANSVERSE-MODE CONTROL IN INGAASP-INP BURIED CRESCENT DIODE-LASERS

被引：17

作者：

OOMURA, E

HIGUCHI, H

HIRANO, R

NAMIZAKI, H

MUROTANI, T

SUSAKI, W

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1049/el:19810060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / 84

页数：2

共 9 条

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[2]

AYABE M, 1980, JAPAN J APPL PHY S19, P399

[3] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].

BURNHAM, RD ;

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[4] CURVED JUNCTION STABILIZED FILAMENT (CJS']JSF) DOUBLE-HETEROSTRUCTURE INJECTION-LASER [J].

FIGUEROA, L ;

WANG, S .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :55-57

[5] GALNASP-INP DH LASERS AND RELATED FABRICATING TECHNIQUES FOR INTEGRATION [J].

IGA, K ;

KAMBAYASHI, T ;

WAKAO, K ;

MORIKI, K ;

KITAHARA, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :707-710

[6]

KIRBY PA, 1979, ELECTRON LETT, V15, P824

[7]

KIRBY PA, 1976, J APPL PHYS, V47, P4547

[8] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT [J].

MUROTANI, T ;

OOMURA, E ;

HIGUCHI, H ;

NAMIZAKI, H ;

SUSAKI, W .

ELECTRONICS LETTERS, 1980, 16 (14) :566-568

[9]

OOMURA E, UNPUBLISHED

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