RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N .1. TEMPERATURE BEHAVIOR OF ZERO-PHONON LINE AND PHONON SIDE-BAND OF BOUND EXCITONS AND RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N .4. FORMATION OF PHONON SIDE-BAND OF BOUND EXCITONS - REPLY

被引：0

作者：

ZHANG, XY

DOU, K

HONG, Q

机构：

[1] Changchun Institute of Physics, Chinese Academy of Sciences 1, Changchun 130021, Yan'an Road

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.46.5006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For excitons trapped at deep centers such as N in GaP, the phonon sidebands are composed of a phonon-assisted momentum-conserving indirect transition and a multiphonon transition. As a result, the temperature dependence of phonon sidebands can be different from that of the corresponding zero-phonon lines. We suggest distinguishing the term "replica" due only to multiphonon processes from the term "sideband." A full-kinetic-analysis method is suggested for use in unraveling the complicated temperature dependence of the luminescence of bound excitons in GaP:N.

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页码：5006 / 5007

页数：2

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