SURFACE VACANCIES IN INP AND GAAIAS

被引：68

作者：

DAW, MS

SMITH, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：690 / 692

页数：3

共 16 条

[1] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[2] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].

BEST, JS .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527

[3] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[4] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[5] VACANCIES NEAR SEMICONDUCTOR SURFACES [J].

DAW, MS ;

SMITH, DL .

PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156

[6]

KOSHIGA F, UNPUBLISHED

[7] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J].

LINDAU, I ;

CHYE, PW ;

GARNER, CM ;

PIANETTA, P ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1332-1339

[8] CAPACITANCE-VOLTAGE AND SURFACE PHOTO-VOLTAGE MEASUREMENTS OF PYROLYTICALLY DEPOSITED SIO2 ON INP [J].

MEINERS, LG .

THIN SOLID FILMS, 1979, 56 (1-2) :201-207

[9] SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM [J].

MONEMAR, B ;

SHIH, KK ;

PETTIT, GD .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2604-2613

[10] INTERACTION OF CHLORINE WITH INDIUM-PHOSPHIDE SURFACES [J].

MONTGOMERY, V ;

WILLIAMS, RH ;

VARMA, RR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (10) :1989-2000

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