TEMPERATURE DEPENDENCE OF PIEZORESISTANCE OF N-TYPE GASB

被引:1
作者
YEE, SS
KALKBRENNER, FW
机构
[1] Electrical Engineering Department, University of Washington, Seattle, Washington
[2] Semiconductor Products Department, General Electric Company, Syracuse, New York
来源
PHYSICA STATUS SOLIDI | 1969年 / 36卷 / 01期
关键词
D O I
10.1002/pssb.19690360153
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
[No abstract available]
引用
收藏
页码:K41 / +
页数:1
相关论文
共 8 条
[1]   EFFECT OF DONOR IMPURITY CONCENTRATION ON PIEZORESISTANCE OF N-TYPE GASB [J].
AVEROUS, M ;
BOUGNOT, G .
PHYSICA STATUS SOLIDI, 1967, 21 (02) :665-&
[2]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[3]   THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J].
KEYES, RW .
SOLID STATE PHYSICS, 1960, 11 :149-221
[4]  
MCSKIMIN HJ, 1956, B AM PHYS SOC, V1, P111
[5]   APPARATUS FOR PIEZORESISTANCE MEASUREMENT [J].
POLLAK, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1958, 29 (07) :639-641
[6]   EXPERIMENTAL INVESTIGATION OF CONDUCTION BAND OF GASB [J].
SAGAR, A .
PHYSICAL REVIEW, 1960, 117 (01) :93-100
[7]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49
[8]  
TUFTE ON, 1964, PHYS REV, V133, P1450