共 9 条
[1]
BERGLUND CN, 1966, IEEE T ELECTRON DEV, P710
[2]
COURAT JP, IN PRESS
[4]
FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
[J].
PHYSICA STATUS SOLIDI,
1963, 3 (03)
:447-464
[5]
SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967, 46 (06)
:1055-+
[6]
INVESTIGATIONS ON HIGH-DENSITY SURFACE STATES IN MOS STRUCTURES USING VARIATIONS OF COMPLEX CAPACITY WITH FREQUENCY
[J].
JOURNAL DE PHYSIQUE,
1969, 30 (01)
:71-+
[7]
NUZILLAT G, 1969, THESIS TROSIEME CYCL