TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION

被引：106

作者：

NAMIZAKI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：427 / 431

页数：5

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[9] THRESHOLD CURRENT-DENSITY AND LASING TRANSVERSE MODE IN A GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASER [J].

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