PHOTON-ASSISTED ELECTRIC-FIELD DOMAINS AND MULTIPHOTON-ASSISTED TUNNELING IN SEMICONDUCTOR SUPERLATTICES

被引：173
作者：
KEAY, BJ
ALLEN, SJ
GALAN, J
KAMINSKI, JP
CAMPMAN, KL
GOSSARD, AC
BHATTACHARYA, U
RODWELL, MJW
机构：
[1] OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210
[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[3] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
[4] UNIV CARLOS III MADRID,E-28911 LEGANES,SPAIN
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.75.4098
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the first observation of photon-assisted tunneling induced electric field domains, terahertz multiphoton-assisted tunneling, and an oscillatory dependence of the photon induced currents on terahertz electric field strength in semiconductor superlattices. The new structure in the current-voltage (I-V) characteristics-as well as the dependence of the current on terahertz electric field strength compares favorably with a model for the current and electrical field profile in superlattices in which new virtual states serve a role similar to the unperturbed quantum well states.
引用
收藏
页码：4098 / 4101
页数：4
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