BASE ETCHED SELF-ALIGNED TRANSISTOR TECHNOLOGY FOR ADVANCED POLYEMITTER BIPOLAR-TRANSISTORS

被引：0
|
作者：
KUMAR, MJ
ROULSTON, DJ
机构：
[1] Department of Electrical and Computer Engineering, University of Waterloo, Waterloo
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 10期
关键词：
BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICES;
D O I：
10.1049/el:19940545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the fabrication of double selfaligned advanced bipolar transistors using base etched selfaligned transistor technology (BESTT). The main feature of these transistors is that the base and emitter contacts are self-aligned although using only a single poly layer. The fabrication and DC electrical measurements are discussed.
引用
收藏
页码：819 / 820
页数：2
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