CAPACITIVE EFFECTS OF AU AND CU IMPURITY LEVELS IN PT-N TYPE SI SCHOTTKY BARRIERS

被引：51

作者：

ROBERTS, GI ^{[1
]}

CROWELL, CR ^{[1
]}

机构：

[1] UNIV SO CALIF, DEPT MAT SCI, LOS ANGELES, CA 90007 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1101(73)90122-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 38

页数：10

共 18 条

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[9] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J].

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[10]

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