OPTICALLY INDUCED BISTABLE STATES IN METAL-TUNNEL-OXIDE-SEMICONDUCTOR (MTOS) JUNCTIONS

被引：34

作者：

LAI, SK ^{[1
]}

DRESSENDORFER, PV ^{[1
]}

MA, TP ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.92126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：41 / 44

页数：4

共 14 条

[1] TUNNELING IN ULTRATHIN SIO2 LAYERS ON SILICON - COMMENTS ON DISPERSION-RELATIONS FOR ELECTRONS AND HOLES [J].

CARD, HC ;

NG, KK .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :877-879

[2] PROCESSING DEPENDENCE OF METAL TUNNEL-OXIDE SILICON JUNCTIONS [J].

DRESSENDORFER, PV ;

LAI, SK ;

BARKER, RC ;

MA, TP .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :850-852

[3] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J].

DRESSENDORFER, PV ;

BARKER, RC .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :933-935

[4]

DRESSENDORFER PV, 1978, THESIS YALE U

[5]

ELBRADY A, 1977, SOLID STATE ELECTRON, V20, P963

[6] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :349-365

[7] CONTROLLED-INVERSION TRANSISTORS [J].

KROGER, H ;

WEGENER, HAR .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :303-304

[8] BISTABLE IMPEDANCE STATES IN MIS STRUCTURES THROUGH CONTROLLED INVERSION [J].

KROGER, H ;

WEGENER, HAR .

APPLIED PHYSICS LETTERS, 1973, 23 (07) :397-399

[9]

LAI SK, 1979, THESIS YALE U

[10]

LAI SKC, 1977, 1977 SISC C MIAM BEA

← 1 2 →