ANALYTICAL MODELING OF TRANSFER ADMITTANCE IN SMALL MOSFETS AND APPLICATION TO INTERFACE STATE CHARACTERIZATION

A simple analytical model for the transfer admittance (dynamic transconductance) of MOS transistors is presented. This model establishes a direct correlation between the transfer admittance and the interface state admittance in an explicit analytical form. Experimental measurements have been performed and the obtained results with our theory. We present a new method for characterising interface states in MOS transistors of channel lengths less than 10 mu m from the measurement of the imaginary part of the inverse of the transfer admittance.