CURRENT TRANSPORT MECHANISMS IN GAAS/ALAS TUNNEL STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

BONNEFOI, AR ^{[1
]}

CHOW, DH ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

PONCE, FA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：988 / 995

页数：8

共 23 条

[1]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[2] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[3] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

COLLINS, RT ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :285-287

[4] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

LINDSTROM, C ;

PAOLI, TL ;

HOLONYAK, N .

ELECTRONICS LETTERS, 1982, 18 (25-2) :1095-1097

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[6] INELASTIC TUNNELING CHARACTERISTICS OF ALAS GAAS HETEROJUNCTIONS [J].

COLLINS, RT ;

LAMBE, J ;

MCGILL, TC ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :532-534

[7] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

MASSIES, J ;

LAVIRON, M ;

CHAPLART, J ;

LINH, T .

ELECTRONICS LETTERS, 1982, 18 (02) :85-87

[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[9] TUNNELLING THROUGH VERY LOW BARRIERS [J].

GUERET, P ;

KAUFMANN, U ;

MARCLAY, E .

ELECTRONICS LETTERS, 1985, 21 (08) :344-346

[10] ELECTRON-TRANSPORT THROUGH THE MOCVD GROWN GAAS/ALGAAS/GAAS HETEROJUNCTION BARRIER [J].

HASE, I ;

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1984, 20 (12) :491-492

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