ELECTROMIGRATION EFFECTS IN ALUMINUM-ALLOY METALLIZATION

被引：41

作者：

LEARN, AJ ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEVEL LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：531 / 552

页数：22

共 15 条

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[2]

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[4] EFFECT OF COPPER ADDITIONS ON ELECTROMIGRATION IN ALUMINUM THIN FILMS [J].

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[5] ACTIVATION-ENERGY FOR ELECTROMIGRATION FAILURE IN ALUMINUM FILMS CONTAINING COPPER [J].

DHEURLE, FM ;

SHINE, MC ;

AINSLIE, NG ;

GANGULEE, A .

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[6]

HALL E, 1972, J ELECTRON MATER, V1, P333

[7] EFFECT OF STRUCTURE AND PROCESSING ON ELECTROMIGRATION-INDUCED FAILURE IN ANODIZED ALUMINUM [J].

LEARN, AJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1251-1258

[8] EFFECT OF REDUNDANT MICROSTRUCTURE ON ELECTROMIGRATION-INDUCED FAILURE [J].

LEARN, AJ .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :292-&

[9]

LEARN AJ, 1971, 9 P ANN IEEE REL PHY, P129

[10]

LEARN AJ, TO BE PUBLISHED

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