X-ray emission from a crystal undulator-Experimental results at channeling of electrons

被引：19

作者：

Backe, H. ^{[1
]}

Krambrich, D. ^{[1
]}

Lauth, W. ^{[1
]}

Hansen, J. Lundsgaard ^{[2
]}

Uggerhoj, U. I. ^{[2
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Nucl Phys, D-55099 Mainz, Germany

[2] Univ Aarhus, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

来源：

NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS | 2011年 / 34卷 / 04期

关键词：

D O I：

10.1393/ncc/i2011-10938-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission from a 4-period epitaxially grown strained layer Si1-xGex undulator with a period length lambda(u) = 9.9 mu m. Electron energies of 270 and 855 MeV have been chosen. In comparison with a flat silicon reference crystal, a broad excess yield around the theoretically expected photon energies of 0.069 and 0.637 MeV, respectively, has been observed for channeling at the undulating (110) planes. The results are discussed within the framework of the classical undulator theory.

引用

页码：157 / 165

页数：9

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