650-A SELF-ALIGNED-GATE PSEUDOMORPHIC AL0.48IN0.52AS/GA0.20IN0.80AS HIGH ELECTRON-MOBILITY TRANSISTORS

被引：48
作者：
NGUYEN, LD
BROWN, AS
THOMPSON, MA
JELLOIAN, LM
LARSON, LE
MATLOUBIAN, M
机构：
[1] Hughes Research Laboratories, Malibu, CA
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期
关键词：
D O I：
10.1109/55.144991
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We wish to report on the design and fabrication of a 650-angstrom self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency over 300 GHz. This work clearly demonstrates the potential of sub-0.1-mu-m gate-length HEMT's for near-future microwave and millimeter-wave applications.
引用
收藏
页码：143 / 145
页数：3
相关论文
共 8 条
[1]   DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].
CHAO, PC ;
SHUR, MS ;
TIBERIO, RC ;
DUH, KHG ;
SMITH, PM ;
BALLINGALL, JM ;
HO, P ;
JABRA, AA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473
[2]   INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J].
CIRILLO, NC ;
SHUR, MS ;
ABROKWAH, JK .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :71-74
[3]   ELECTRON SATURATION VELOCITY VARIATION IN INGAAS AND GAAS CHANNEL MODFETS FOR GATE LENGTHS TO 550-A [J].
DELAHOUSSAYE, PR ;
ALLEE, DR ;
PAO, YC ;
SCHLOM, DG ;
HARRIS, JS ;
PEASE, RFW .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :148-150
[4]   ULTRA-SUBMICROMETER-GATE ALGAAS/GAAS HEMTS [J].
HAN, J ;
FERRY, DK ;
NEWMAN, P .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) :209-211
[5]  
MISHRA UK, 1989, DEC IEDM, P101
[6]  
NGUYEN LD, 1990, P SOC PHOTO-OPT INS, V1288, P251, DOI 10.1117/12.20925
[7]  
NGUYEN LD, 1990, DEC IEDM, P499
[8]  
THOMPSON MA, 1991, 35TH INT S EL ION PH
1