THERMOELECTRIC-POWER OF BORON PHOSPHIDE AT HIGH-TEMPERATURES

被引:19
作者
YUGO, S
KIMURA, T
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 59卷 / 01期
关键词
D O I
10.1002/pssa.2210590148
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:363 / 370
页数:8
相关论文
共 6 条
[1]   CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].
CHU, TL ;
JACKSON, JM ;
HYSLOP, AE ;
CHU, SC .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :420-&
[2]   CRYSTAL-GROWTH OF BORON MONOPHOSPHIDE FROM CU-FLUXED MELT [J].
KATO, N ;
KAMMURA, W ;
IWAMI, M ;
KAWABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1623-1627
[3]   EFFECT OF GROWTH PARAMETERS ON EPITAXIAL-GROWTH OF BP ON SI SUBSTRATE [J].
NISHINAGA, T ;
MIZUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) :753-760
[4]  
OSAWA J, 1978, JPN J APPL PHYS, V17, P1579
[5]  
SHONO K, 1974, J CRYST GROWTH, V24, P193
[6]   SEMICONDUCTING PROPERTIES OF CUBIC BORON PHOSPHIDE [J].
STONE, B ;
HILL, D .
PHYSICAL REVIEW LETTERS, 1960, 4 (06) :282-284