KINETICS OF THERMAL-STRESS INDUCED VOID GROWTH IN NARROW ALUMINUM LINES

被引：4

作者：

BORGESEN, P

LEE, JK

PASZKIET, CA

LI, CY

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1-mu-m-wide Al lines were passivated at 300-degrees-C and annealed at 400-degrees-C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.

引用

页码：1341 / 1343

页数：3

共 8 条

[1] Borgesen P., UNPUB
[2] MECHANISMS OF THERMAL-STRESS RELAXATION AND STRESS-INDUCED VOIDING IN NARROW ALUMINUM-BASED METALLIZATIONS
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[3] KORHONEN MA, IN PRESS MATER RES S, V225
[4] ANALYSIS OF THERMAL STRESS-INDUCED GRAIN-BOUNDARY CAVITATION AND NOTCHING IN NARROW AL-SI METALLIZATIONS
LI, CY
BLACK, RD
LAFONTAINE, WR
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 31 - 33
[5] PASZKIET CA, IN PRESS MATER RES S, V225
[6] PASZKIET CA, IN PRESS MATER RES S, V203
[7] PASZKIET CA, UNPUB
[8] Yue J. T., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P126, DOI 10.1109/IRPS.1985.362087

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