HOT-CARRIER-INDUCED DEGRADATION OF THE BACK INTERFACE IN SHORT-CHANNEL SILICON-ON-INSULATOR MOSFETS

被引：36
作者：
OUISSE, T [1 ]
CRISTOLOVEANU, S [1 ]
BOREL, G [1 ]
机构：
[1] INST NATL POLYTECH GRENOBLE,ECOLE NATL SUPER ELECTR & RADIOELECT GRENOBLE,CNRS,F-38016 GRENOBLE,FRANCE
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期
关键词：
D O I：
10.1109/55.82064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The tolerance of silicon-on-insulator (SOI) MOSFET's to hot-carrier injection into the buried oxide is investigated. Stressing the back channel results in a reversible electron trapping and a formation of localized defects at the buried interface. This damage is responsible for the transconductance overshoot, large threshold voltage shift, and attenuated kink effect.
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收藏
页码：290 / 292
页数：3
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