CLOSE-CONTACT ANNEALING OF ION-IMPLANTED GAAS AND INP

被引：63

作者：

MOLNAR, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 11期

关键词：

D O I：

10.1063/1.91376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：927 / 929

页数：3

共 10 条

[1]

CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[2] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J].

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APPLIED PHYSICS LETTERS, 1977, 31 (07) :418-420

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

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LINDLEY, WT ;

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IMMORLICA, AA ;

EISEN, FH .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :94-95

[6] MULTILAYERED ENCAPSULATION OF GAAS [J].

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PENG, J .

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[7] STUDIES OF VAPORIZATION MECHANISM OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].

LOU, CY ;

SOMORJAI, GA .

JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (09) :4554-&

[8] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE [J].

MALBON, RM ;

LEE, DH ;

WHELAN, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1413-1415

[9]

MANDAL RP, 1978, GALLIUM ARSENIDE REL, V45, P462

[10] GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS BY ION-IMPLANTATION [J].

WELCH, BM ;

EISEN, FH ;

HIGGINS, JA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3685-3687

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