IMPACT IONIZATION OF DEEP TRAPS IN SEMI-INSULATING GAAS SUBSTRATES

被引：32

作者：

LI, ZM ^{[1
]}

MCALISTER, SP ^{[1
]}

MCMULLAN, WG ^{[1
]}

HURD, CM ^{[1
]}

DAY, DJ ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.344523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of the leakage current in the semi-insulating substrate of a GaAs device is more complicated than previously recognized. The voltage dependence of this current seen in a conventional voltage-controlled experiment has hysteresis, which arises from an S-type negative differential conductivity (S-NDC). This is incompatible with the conventional trap-fill-limited model, and we propose an alternative explanation based on the impact ionization of deep-level traps. We show how this simple model can account qualitatively for the S-NDC and the associated current instability, and how it can be extended when the deep traps are photoexcitable.

引用

页码：7368 / 7372

页数：5

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