INHOMOGENEOUS BROADENING OF SPECTRAL-LINES IN DOPED INSULATORS

被引：16
|
作者：
MACFARLANE, RM
机构：
[1] IBM Almaden Research Center, San Jose, CA 95120
来源：
JOURNAL OF LUMINESCENCE | 1990年 / 45卷 / 1-6期
关键词：
D O I：
10.1016/0022-2313(90)90089-T
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We briefly review work on the nature of inhomogeneous broadening of spectral lines in doped inorganic insulating crystals, and its effect on dynamical processes. Evidence from fluorescence line-narrowing and spectral holeburning suggests that inhomogeneities act as microscopic perturbations, shifting the energy of near-neighbor dopants by an amount comparable to the overall inhomogeneous broadening. Magnetic inhomogeneities due to different nuclear spin configurations are small (≈kHz-MHz) but very important because they vary on the timescale of a spectral holeburning experiment and lead to spectral diffusion. © 1990.
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页码：1 / 5
页数：5
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