ZN-DIFFUSION-INDUCED DAMAGE IN INSB DIODES

被引：11

作者：

MOZZI, RL

LAVINE, JM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.1658334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：280 / &

共 26 条

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