STUDIES OF THE REACTION-MECHANISMS FOR THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FROM TUNGSTEN HEXAFLUORIDE IN A PLASMA ENVIRONMENT

被引:6
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WOOD, J
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10.1016/0042-207X(88)90442-3
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T [工业技术];
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08 ;
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页码:683 / 688
页数:6
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共 28 条
[1]  
BLEWER RS, 1986, TUNGSTEN OTHER REFRA
[2]  
BRECHER LE, 1970, 2ND INT C CHEM VAP D
[3]   SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].
BROADBENT, EK ;
RAMILLER, CL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433
[4]  
BROADBENT EK, 1986, 1984 P WORKSH TUNGST, P365
[5]   SELECTIVE CVD TUNGSTEN VIA PLUGS FOR MULTILEVEL METALLIZATION [J].
BROWN, DM ;
GOROWITZ, B ;
PIACENTE, P ;
SAIA, R ;
WILSON, R ;
WOODRUFF, D .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :55-57
[6]  
CHEUNG H, 1972, 3RD P INT C CHEM VAP, P136
[7]   PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS [J].
CHU, JK ;
TANG, CC ;
HESS, DW .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :75-77
[8]  
Fuhs C., 1986, Tungsten and Other Refractory Metals for VLSI Applications. Proceedings of the 1985 and 1984 Workshops, P257
[9]  
Green M. L., 1987, Proceedings of the Symposium on Multilevel Metallization, Interconnection, and Contact Technologies, P1
[10]  
GREEN ML, 1987, 10TH P INT C CVD, P603