OPTIMIZATION STUDIES OF LOCALIZED DEFECT CALCULATIONS IN SEMICONDUCTORS

被引：12

作者：

BRAND, S

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 24期

关键词：

D O I：

10.1088/0022-3719/11/24/025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4963 / 4973

页数：11

共 18 条

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[10] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O [J].

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