ELECTRON TRAPS IN N-GAAS IRRADIATED WITH HIGH ELECTRON-BEAM FLUXES AT HIGH-TEMPERATURES

被引：11

作者：

BRUDNYI, VN ^{[1
]}

PESCHEV, VV ^{[1
]}

机构：

[1] SM KIROV POLYTECH INST,TOMSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 105卷 / 01期

关键词：

D O I：

10.1002/pssa.2211050147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K57 / K60

页数：4

共 6 条

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[6] DEFECTS INTRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION IN NORMAL-GAAS [J].

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