METAL-SEMICONDUCTOR INTERFACE - SI (111) AND ZINCBLENDE (110) JUNCTIONS

被引:284
作者
TEJEDOR, C
FLORES, F
LOUIS, E
机构
[1] UNIV AUTONOMA MADRID,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN
[2] CSIC,MADRID 34,SPAIN
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 12期
关键词
D O I
10.1088/0022-3719/10/12/022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2163 / 2177
页数:15
相关论文
共 26 条
[11]   BULK CHARGE NEUTRALITY IN SEMICONDUCTORS [J].
KLEINMAN, L .
PHYSICAL REVIEW B, 1975, 11 (02) :858-861
[12]   FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].
KURTIN, S ;
MCGILL, TC ;
MEAD, CA .
PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+
[13]   THEORY OF METAL SURFACES - WORK FUNCTION [J].
LANG, ND ;
KOHN, W .
PHYSICAL REVIEW B, 1971, 3 (04) :1215-&
[14]   EQUIVALENCE OF SURFACE-POTENTIALS [J].
LARREA, E ;
FLORES, F .
SURFACE SCIENCE, 1975, 49 (01) :339-343
[15]   ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469
[16]   METAL-SEMICONDUCTOR JUNCTION FOR (110) SURFACES OF ZINCBLENDE COMPOUNDS [J].
LOUIS, E ;
YNDURAIN, F ;
FLORES, F .
PHYSICAL REVIEW B, 1976, 13 (10) :4408-4418
[17]   SCHOTTKY-BARRIER HEIGHTS ON P-TYPE DIAMOND AND SILICON-CARBIDE (6H) [J].
MEAD, CA ;
MCGILL, TC .
PHYSICS LETTERS A, 1976, 58 (04) :249-251
[18]   ELECTRONIC-STRUCTURE AND ADHESIVE ENERGIES AT BIMETALLIC INTERFACES [J].
MEHROTRA, R ;
PANT, MM ;
DAS, MP .
SOLID STATE COMMUNICATIONS, 1976, 18 (02) :199-201
[19]   MICROSCOPIC THEORY OF COVALENT-IONIC TRANSITION AT METAL-SEMICONDUCTOR INTERFACES [J].
PHILLIPS, JC .
SOLID STATE COMMUNICATIONS, 1973, 12 (09) :861-864
[20]   SELF-CONSISTENT MANY-ELECTRON THEORY OF ELECTRON WORK FUNCTIONS AND SURFACE POTENTIAL CHARACTERISTICS FOR SELECTED METALS [J].
SMITH, JR .
PHYSICAL REVIEW, 1969, 181 (02) :522-&