ENHANCEMENT OF BARRIER HEIGHT OF AU/PNX/INP SCHOTTKY DIODES BY IN-SITU SURFACE-TREATMENT

被引：18

作者：

SAKAMOTO, Y

SUGINO, T

MIYAZAKI, T

SHIRAFUJI, J

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 13期

关键词：

SCHOTTKY-BARRIER DIODES; INDIUM PHOSPHIDE; PLASMA DEPOSITION;

D O I：

10.1049/el:19950756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au/PNx/InP Schottky junctions have been formed using a sophisticated in situ multistep plasma process. An effective barrier height as high as 0.83eV has been achieved for Au/PNx/InP Schottky diodes. The true barrier height estimated from the Richardson plot was 0.57eV. This suggests that the surface Fermi level pinned at 0.39eV below the conduction band edge for conventionally prepared Au/InP Schottky junctions is weakened in plasma-treated Au/PNx/InP Schottky junctions. The effective barrier is enhanced by the effects of both the metal-insulator-semiconductor structure and weakened pinning of the surface Fermi revel.

引用

页码：1104 / 1105

页数：2

共 11 条

[1]

CARD HC, 1971, J PHYS D, V7, P1589

[2] A NEW METHOD TO FABRICATE AU/N-TYPE INP SCHOTTKY CONTACTS WITH AN INTERFACIAL LAYER [J].