ELECTRICAL PROPERTIES OF PB1-XSNXSE SEMICONDUCTING ALLOYS

被引:5
作者
HOFF, GF
DIXON, JR
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D O I
10.1016/0038-1098(72)90913-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:433 / &
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[11]   METALLURGICAL AND ELECTRONIC PROPERTIES OF PB1-XSNXTE PB1-XSNXSE AND OTHER 4-6 ALLOYS [J].
STRAUSS, AJ .
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03) :354-&
[12]   Optical properties of Pb1-xSnxSe thin layers grown by HWE [J].
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[13]   LOCALIZED DEFECT STATES IN ELECTRON-IRRADIATED PB1-XSNXSE ALLOYS [J].
SKIPETROV, EP ;
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KOVALEV, BB .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (09) :831-832
[14]   STRUCTURAL PHASE-TRANSITIONS IN PB1-XSNXSE ALLOYS UNDER PRESSURE [J].
BRANDT, NB ;
PONOMAREV, YG ;
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TITEL, V ;
SHTANOV, VI .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04) :403-405
[15]   Optical properties of Pb1-xSnxSe thin layers grown by HWE [J].
Charar, S ;
Obadi, A ;
Fau, C ;
Averous, M ;
Ribes, VD ;
DalCorso, S ;
Liautard, B ;
Tedenac, JC ;
Brunet, S .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1996, 17 (02) :365-374
[16]   IN-BAND NONLINEAR OPTICAL-PROPERTIES OF PB1-XSNXSE [J].
YOUNGDALE, ER ;
MEYER, JR ;
HOFFMAN, CA ;
BARTOLI, FJ ;
MARTINEZ, A .
SOLID STATE COMMUNICATIONS, 1991, 80 (02) :95-99
[17]   INFLUENCE OF BAND CROSSING UPON ELECTRIC PROPERTIES OF PB1-XSNXSE [J].
HOFF, GF ;
DIXON, JR .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (11) :1378-&
[18]   EPITAXIAL LAYERS OF PB1-XSNXTE AND PB1-XSNXSE [J].
SHOTOV, AP ;
DAVARASHVILI, OI .
INORGANIC MATERIALS, 1977, 13 (04) :501-503
[19]   LOCAL-BAND CONDUCTION IN ELECTRON-IRRADIATED PB1-XSNXSE ALLOYS [J].
SKIPETROV, EP ;
DUBKOV, VP ;
MUSALITIN, AM ;
PODSEKALOV, IN .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10) :1129-1133
[20]   BAND INVERSION IN PB1-XSNXSE ALLOYS UNDER HYDROSTATIC-PRESSURE .2. GALVANOMAGNETIC PROPERTIES [J].
MARTINEZ, G .
PHYSICAL REVIEW B, 1973, 8 (10) :4686-4692