SEMI-INSULATING BLOCKED PLANAR BH GAINASP-INP LASER WITH HIGH-POWER AND HIGH MODULATION BANDWIDTH

被引：32
作者：
KOREN, U
MILLER, BI
EISENSTEIN, G
TUCKER, RS
RAYBON, G
CAPIK, RJ
机构：
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 03期
关键词：
D O I：
10.1049/el:19880092
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：138 / 140
页数：3
相关论文
共 9 条
[1]   HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].
BOWERS, JE ;
HEMENWAY, BR ;
GNAUCK, AH ;
WILT, DP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844
[2]   FIELD AND HOT CARRIER ENHANCED LEAKAGE IN INGAASP/INP HETEROJUNCTIONS [J].
CHIU, LC ;
YU, KL ;
MARGALIT, S ;
CHEN, TR ;
KOREN, U ;
HASSON, A ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (09) :1335-1338
[3]   WIDE-BANDWIDTH MODULATION OF 3-CHANNEL BURIED-CRESCENT LASER-DIODES [J].
KOREN, U ;
EISENSTEIN, G ;
BOWERS, JE ;
GNAUCK, AH ;
TIEN, PK .
ELECTRONICS LETTERS, 1985, 21 (11) :500-501
[4]  
KOREN U, 1986, 10TH IEEE INT SEM LA
[5]  
LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121
[6]   PLANAR BURIED HETEROSTRUCTURE INP GAINAS LASERS GROWN ENTIRELY BY OMVPE [J].
MILLER, BI ;
KOREN, U ;
CAPIK, RJ .
ELECTRONICS LETTERS, 1986, 22 (18) :947-949
[7]   INGAASP BURIED HETEROSTRUCTURE LASER WITH 22 GHZ BANDWIDTH AND HIGH MODULATION EFFICIENCY [J].
OLSHANSKY, R ;
POWAZINIK, W ;
HILL, P ;
LANZISERA, V ;
LAUER, RB .
ELECTRONICS LETTERS, 1987, 23 (16) :839-841
[8]   HIGH-POWER 1.3-MUM INGAASP P-SUBSTRATE BURIED CRESCENT LASERS [J].
SAKAKIBARA, Y ;
HIGUCHI, H ;
OOMURA, E ;
NAKAJIMA, Y ;
YAMAMOTO, Y ;
GOTO, K ;
NAMIZAKI, H ;
IKEDA, K ;
SUSAKI, W .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (05) :978-984
[9]  
SAKAKIBARA Y, 1986, OFC TUJ6 CONF PAP
1