RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS

被引：191

作者：

CUSANO, DA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1964年 / 2卷 / 11期

关键词：

D O I：

10.1016/0038-1098(64)90259-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：353 / 358

页数：6

共 15 条

[1]

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[4]

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JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :295-&

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[8]

KEYES RJ, 1962, P IRE, V50, P1822

[9] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J].

LUCOVSKY, G ;

REPPER, CJ .

APPLIED PHYSICS LETTERS, 1963, 3 (05) :71-72

[10] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

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