DOPANT AND DEFECT ENERGETICS - SI IN GAAS

被引：281
作者：
NORTHRUP, JE
ZHANG, SB
机构：
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.47.6791
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculate the formation energy of Si donors, acceptors, and defect complexes in GaAs. From these energies we obtain the equilibrium concentrations of native defects and Si-defect complexes as well as the total solubility of Si in GaAs. The calculated equilibrium solubility limit of Si is in good agreement with experiment. The (Si(Ga)-V(Ga))2- complex occurs in relatively high concentrations under As-rich conditions and may therefore mediate Si and Ga diffusion. The donor-vacancy complex is found to be an important mechanism for compensation in heavily doped GaAs.
引用
收藏
页码：6791 / 6794
页数：4
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