DOPANT AND DEFECT ENERGETICS - SI IN GAAS

被引：281

作者：

NORTHRUP, JE

ZHANG, SB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.47.6791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the formation energy of Si donors, acceptors, and defect complexes in GaAs. From these energies we obtain the equilibrium concentrations of native defects and Si-defect complexes as well as the total solubility of Si in GaAs. The calculated equilibrium solubility limit of Si is in good agreement with experiment. The (Si(Ga)-V(Ga))2- complex occurs in relatively high concentrations under As-rich conditions and may therefore mediate Si and Ga diffusion. The donor-vacancy complex is found to be an important mechanism for compensation in heavily doped GaAs.

引用

页码：6791 / 6794

页数：4

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