Narrow-gap piezoelectric heterostructure as IR detector

被引：2

作者：

Sizov, F. F. ^{[1
]}

Smirnov, A. B. ^{[1
]}

Savkina, R. K. ^{[1
]}

Deriglazov, V. A. ^{[1
]}

Yakushev, M. V. ^{[2
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] RAS, SB, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2012年 / 15卷 / 01期

关键词：

IR detector; strained heterostructure; piezoelectric properties; HgCdTe;

D O I：

10.15407/spqeo15.01.065

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3-5 mu m) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 .10(9) W(-1)cm.Hz(1/2). The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties.

引用

页码：65 / 71

页数：7

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