PHOTOLUMINESCENCE OF INGAN FILMS GROWN AT HIGH-TEMPERATURE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：228
|
作者：
YOSHIMOTO, N
MATSUOKA, T
SASAKI, T
KATSUI, A
机构：
[1] NTT Opto-Electronics Laboratories, Ibaraki 319-11
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期
关键词：
D O I：
10.1063/1.106086
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800-degrees-C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.
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页码：2251 / 2253
页数：3
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