INTRODUCTION TO DEFECT BISTABILITY

被引：53

作者：

CHANTRE, A

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期

关键词：

D O I：

10.1007/BF00617758

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3 / 9

页数：7

共 16 条

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[9] THERMAL DONOR FORMATION IN SILICON - A NEW KINETIC-MODEL BASED ON SELF-INTERSTITIAL AGGREGATION
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