CRYSTALLIZATION OF VACUUM-DEPOSITED TE-SE-CU ALLOY FILM

The crystallization process and amorphous stability of vacuum deposited Te-Se-Cu alloy film was studied. Dependence of crystallization temperature (Tc) and activation energy (Ea) on the alloy film composition was investigated by differential scanning calorimeter. The Cu concentration influences the number of crystallization stages in this ternary alloy film. Two crystallization stages with different crystallization temperatures exist, when Cu is more than 8 at% and less than 30 at%. But only one crystallization stage occurs at higher than 30 at% Cu. The most stable amorphous state is obtained at 30 at% Cu and at either Se/ (Se+Te) is 8 or 15 at% Se. Addition of Se has an effect of stabilizing the amorphous state of this alloy, but the Se concentration does not influence the number of crystallization stages. When in (Te100-xSex)0.7Cu30 alloy film, the x is between 15 and 50, the very high value of activation energy (about 3.8 ev) is obtained.