HEATING OF ELECTRONS IN THE INJECTION SEMICONDUCTOR-LASER

被引：0
作者：
MALAKHOVA, VI
PLYAVENEK, AG
RIVLIN, LA
FILIMONOV, SI
YAKUBOVICH, SD
机构：
来源：
KVANTOVAYA ELEKTRONIKA | 1988年 / 15卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：695 / 701
页数：7
相关论文
共 12 条
  • [1] BRONEVOI LI, 1986, PISMA ZHETF, V43, P368
  • [2] GANTMAKHER VF, 1984, RASSEYANIE NOSITELEI
  • [3] GOLDOBIN IS, 1980, KVANTOVAYA ELEKTRON+, V7, P2489
  • [4] INVESTIGATIONS ON UNSATURATED OPTICAL GAIN SPECTRA OF GAAS-GAA1AS-DHS LASERS AT ABOVE THRESHOLD CONDITIONS
    HILDEBRAND, O
    GOBEL, E
    LOHNERT, K
    [J]. APPLIED PHYSICS, 1978, 15 (02): : 149 - 152
  • [5] PICOSECOND LUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION IN III-V SEMICONDUCTORS USING SUM FREQUENCY GENERATION
    KASH, K
    SHAH, J
    BLOCK, D
    GOSSARD, AC
    WIEGMANN, W
    [J]. PHYSICA B & C, 1985, 134 (1-3): : 189 - 197
  • [6] KEISI K, 1981, LAZERY GETEROSTRUKTU, V1
  • [7] MALAKHOVA VI, 1980, KVANTOVAYA ELEKTRON+, V7, P1252
  • [8] SUBPICOSECOND SPECTRAL HOLE BURNING DUE TO NON-THERMALIZED PHOTOEXCITED CARRIERS IN GAAS
    OUDAR, JL
    HULIN, D
    MIGUS, A
    ANTONETTI, A
    ALEXANDRE, F
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2074 - 2077
  • [9] PLYAVENEK AG, 1987, KVANTOVAYA ELEKTRON+, V14, P71
  • [10] RIVLIN LA, 1985, KVANTOVAYA ELEKTRON+, V12, P689
12