MAGNETORESISTANCE OF UNDOPED N-TYPE GALLIUM ARSENIDE AT LOW TEMPERATURES

被引：52
作者：
HALBO, L
SLADEK, RJ
机构：
来源：
PHYSICAL REVIEW | 1968年 / 173卷 / 03期
关键词：
D O I：
10.1103/PhysRev.173.794
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：794 / &
相关论文
共 41 条
[1]   MAGNETORESISTANCE OF N-TYPE GERMANIUM IN PHONON-ASSISTED HOPPING CONDUCTION RANGE AT HIGH MAGNETIC FIELDS [J].
CHROBOCZEK, JA ;
SLADEK, RJ .
PHYSICAL REVIEW, 1966, 151 (02) :595-+
[2]   MAGNETICALLY INDUCED SPIN-REVERSAL TRANSITIONS IN IMPURITY HOP CONDUCTION IN N-TYPE GERMANIUM [J].
CHROBOCZEK, JA ;
PROHOFSKY, EW ;
SLADEK, RJ .
PHYSICAL REVIEW, 1968, 169 (03) :593-+
[3]  
CHROBOCZEK JA, 1967, PHYS LETTERS, VA 24, P657
[4]   COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM [J].
DAVIS, EA ;
COMPTON, WD .
PHYSICAL REVIEW, 1965, 140 (6A) :2183-&
[5]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[6]   ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE [J].
EDDOLLS, DV .
PHYSICA STATUS SOLIDI, 1966, 17 (01) :67-&
[7]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[8]   EFFECT OF UNIAXIAL COMPRESSION ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM [J].
FRITZCHE, H .
PHYSICAL REVIEW, 1962, 125 (05) :1552-&
[9]   IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
CUEVAS, M .
PHYSICAL REVIEW, 1960, 119 (04) :1238-1245
[10]   RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J].
FRITZSCHE, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) :69-80
12345