INFLUENCE OF RADIATION-DAMAGE ON IMPURITY DIFFUSION FROM IMPLANTED LAYER IN SILICON

被引：0
|
作者：
PAVLOV, PV [1 ]
PASHKOV, VI [1 ]
TULOVCHIKOV, VS [1 ]
CHIGIRINSKAYA, GY [1 ]
机构：
[1] NI LOBACHEVSKII STATE UNIV,ENGN PHYS RES INST,GORKI,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：181 / 183
页数：3
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