SOLUTION HARDENING DUE TO A NONRANDOM ATOM ARRANGEMENT IN III-V TERNARY ALLOY SEMICONDUCTORS

被引：4

作者：

ICHIMURA, M ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

ATOM ARRANGEMENT - SOLUTION HARDENING;

D O I：

10.1143/JJAP.27.L176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L176 / L178

页数：3

共 15 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA B, pCH8

[2] AN APPROXIMATE THEORY OF ORDER IN ALLOYS [J].

COWLEY, JM .

PHYSICAL REVIEW, 1950, 77 (05) :669-675

[3] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[4]

FIORE NF, 1967, PROG MATER SCI, V13, P85

[5] ON THE STRENGTH OF SOLID SOLUTION ALLOYS [J].

FISHER, JC .

ACTA METALLURGICA, 1954, 2 (01) :9-10

[6] SHORT-RANGE ORDER IN III-V TERNARY ALLOY SEMICONDUCTORS [J].

ICHIMURA, M ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :3850-3855

[7] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[8] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

CHERNG, MJ ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1603-1605

[9] 1ST-PRINCIPLES CALCULATION OF SEMICONDUCTOR-ALLOY PHASE-DIAGRAMS [J].

MBAYE, AA ;

FERREIRA, LG ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (01) :49-52

[10]

Nakayama H., 1986, Gallium Arsenide and Related Compounds 1985. Proceedings of the Twelfth International Symposium, P289

← 1 2 →