A Controlled High-Voltage DC Source for Power Semiconductor Components Testing

被引:0
|
作者
Lavric, Henrik [1 ]
Fiser, Rastko [1 ]
机构
[1] Univ Ljubljana, Fac Elect Engn, Trzaska Cesta 25, Ljubljana 1000, Slovenia
来源
ELEKTROTEHNISKI VESTNIK-ELECTROCHEMICAL REVIEW | 2011年 / 78卷 / 04期
关键词
Flyback switching converter; MOSFET; High-voltage transformer; High-frequency oscillations; Reverse current;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The presented high-voltage DC source was designed to enable laboratory measurements of reverse and forward characteristics in non-conducting state of power semiconductor components. It also enables to measure the minimum triggering current or control voltage in dependence of the voltage on main electrodes for SCR, triac or voltage-controlled semiconductor devices such as MOSFET and IGBT, respectively. The source consists of a high-voltage switching converter, voltage and current measuring subsystems and electrically insulated linear-mode current source. Control and measuring tasks inside the source are performed by means of an 8-bit Microchip microcontroller 18F452. The switching converter is comprised of a flyback step-up transformer and four identical secondary modules connected in series. The flyback transformer is carefully constructed to minimize its stray capacitance and leakage inductance. These parasitic components cause high-frequency oscillations and make setting of the precise output voltage even more difficult. In proposed aiming of improving the output-voltage control, the turn-on speed of the switching MOSFET is decreased and, consequently, the charging current of the transformer parasitic capacitors is limited.
引用
收藏
页码:198 / 204
页数:7
相关论文
共 50 条
  • [21] Delay Mismatch Insensitive Dead Time Generator for High-Voltage Switched-Mode Power Amplifiers
    Abuelnasr, Ahmed
    Amer, Mostafa
    Ali, Mohamed
    Hassan, Ahmad
    Gosselin, Benoit
    Ragab, Ahmed
    Savaria, Yvon
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (04) : 1555 - 1565
  • [22] High-voltage switch-mode assisted linear amplifier based voltage source for dielectric low frequency-domain spectroscopy measurements
    Nielsen, Shawn D.
    Walker, Geoffrey R.
    JOURNAL OF ENGINEERING-JOE, 2019, (17): : 4446 - 4451
  • [23] LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
    Sengupta, Arijit
    Ball, Dennis R.
    Sternberg, Andrew L.
    Islam, Sajal
    Senarath, Aditha S.
    Reed, Robert A.
    McCurdy, Michael W.
    Zhang, En Xia
    Hutson, John M.
    Alles, Michael L.
    Osheroff, Jason M.
    Jacob, Biju
    Hitchcock, Collin W.
    Goswami, Shubhodeep
    Schrimpf, Ronald D.
    Galloway, Kenneth F.
    Witulski, Arthur F.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (04) : 809 - 815
  • [24] Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band Diagram
    Mehrad, Mahsa
    Zareiee, Meysam
    Orouji, Ali A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (10) : 4213 - 4218
  • [25] A Kind of Digital Controlled Electro-Optical Switch Power Source with Variable Voltage and Variable Frequency
    Liu, Anguo
    Xu, Zhezhuang
    Wang, Wu
    PROCEEDINGS OF THE 2019 31ST CHINESE CONTROL AND DECISION CONFERENCE (CCDC 2019), 2019, : 1582 - 1587
  • [26] A hybrid fiber-optic sensor system for multi-stress monitoring of high-voltage power transformer
    Kim, Hyunjin
    Park, Hyoung-jun
    Song, Minho
    22ND INTERNATIONAL CONFERENCE ON OPTICAL FIBER SENSORS, PTS 1-3, 2012, 8421
  • [27] Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices
    Sui, Yang
    Walden, Ginger G.
    Wang, Xiaokun
    Cooper, James A.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1449 - 1452
  • [28] Demonstration of a simple and efficient design methodology for high-voltage floating field limiting ring in SiC power devices
    Zhang, Bingke
    Zhou, Hang
    Yi, Bo
    Ge, Huan
    Jin, Rui
    Zhu, Tao
    ELECTRONICS LETTERS, 2024, 60 (09)
  • [29] Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs
    Muthuseenu, K.
    Barnaby, H. J.
    Galloway, K. F.
    Koziukov, A. E.
    Maksimenko, T. A.
    Vyrostkov, M. Y.
    Bu-Khasan, K. B.
    Kalashnikova, A. A.
    Privat, A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (08) : 4004 - 4009
  • [30] Single-Stage Active Split-Source Inverter With High DC-Link Voltage Utilization
    Yin, Changqing
    Ding, Wenlong
    Ming, Lei
    Loh, Poh Chiang
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (06) : 6699 - 6711