A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON

被引：24

作者：

SADAMITSU, S ^{[1
]}

OKUI, M ^{[1
]}

SUEOKA, K ^{[1
]}

MARSDEN, K ^{[1
]}

SHIGEMATSU, T ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD,ADV TECHNOL RES LABS,AMAGASAKI,HYOGO 660,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 5B期

关键词：

CZOCHRALSKI SILICON; OXIDATION-INDUCED STACKING FAULT; OXYGEN PRECIPITATE; STRAIN FIELD; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.34.L597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of oxidation-induced stacking fault (OSF) formation in Czochralski silicon (CZ-Si) crystals was investigated by transmission electron microscopy observations of the initial stages of OSF growth. OSFs were observed to be always generated at one of the [110] edges of platelet oxygen precipitates. We observed previously that these platelet oxygen precipitates had an expansive strain field in the direction parallel to the precipitate plate and a compressive strain field normal to the plate. Silicon self-interstitials having compressive strain are probably attracted to the expansive strain field of the precipitates, and condense to form stacking faults. A new model for OSF generation is presented taking into consideration the strain field around self-interstitials and oxygen precipitates.

引用

页码：L597 / L599

页数：3

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