CHARACTERIZATION OF GERMANIUM IMPLANTED SI1-XGEX LAYER

被引：14

作者：

GUPTA, A

COOK, C

TOYOSHIBA, L

QIAO, JM

YANG, CY

SHOJI, KI

FUKAMI, A

NAGANO, T

TOKUYAMA, T

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

[2] UNIV TSUKUBA, INST APPL PHYS, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 01期

关键词：

BORON DEACTIVATION; ELECTRICAL CHARACTERIZATION; END-OF-RANGE DEFECTS; HETEROJUNCTION BIPOLAR TRANSISTOR; HIGH-DOSE GERMANIUM IMPLANTATION; INTRINSIC BASE RESISTANCE; LOW-TEMPERATURE IMPLANTATION; SIGE; SOLID PHASE EPITAXY; SURFACE DEFECTS;

D O I：

10.1007/BF02665734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characterization of a Si1-xGex layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.

引用

页码：125 / 128

页数：4

共 16 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].