LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON

被引:166
作者
PANKOVE, JI
BERKEYHEISER, JE
机构
关键词
D O I
10.1063/1.92052
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:705 / 706
页数:2
相关论文
共 10 条
[1]   PHOTO-LUMINESCENCE IN SPUTTERED AMORPHOUS SI-H ALLOYS [J].
COLLINS, RW ;
PAESLER, MA ;
MODDEL, G ;
PAUL, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :681-686
[2]   FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].
MORIGAKI, K ;
HIRABAYASHI, I ;
NAKAYAMA, M ;
NITTA, S ;
SHIMAKAWA, K .
SOLID STATE COMMUNICATIONS, 1980, 33 (08) :851-856
[3]   PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON [J].
PANKOVE, JI ;
CARLSON, DE .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :450-451
[4]   TEMPERATURE DEPENDENCE OF EMISSION EFFICIENCY AND LASING THRESHOLD IN LASER DIODES [J].
PANKOVE, JI .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :119-&
[5]   PHOTO-LUMINESCENCE RECOVERY IN RE-HYDROGENATED AMORPHOUS SILICON [J].
PANKOVE, JI .
APPLIED PHYSICS LETTERS, 1978, 32 (12) :812-813
[6]  
PANKOVE JI, 1977, AMORPHOUS LIQUID SEM, P402
[7]  
SCHADE HE, UNPUBLISHED
[8]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[9]   DEFECTS IN BOMBARDED AMORPHOUS-SILICON [J].
STREET, R ;
BIEGELSEN, D ;
STUKE, J .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (06) :451-464
[10]  
STREET RA, 1974, AMORPHOUS LIQUID SEM